The goal of this project is to determine reliability of generations of the DRAM. DRAM is used as main memory in most computer systems, and its use and study in harsh, radioactive environments is desirable. Each generation of DRAM tested was characterized based on the retention capabilities and vulnerability to row hammer attacks of their memory cells.
A resourceful introductory guide to the tools used for our project can be found here.
Instructions to setup our BIST design are here.
Instructions to setup the Row Hammer Tester are here.
A design using ECC with LiteDRAM was created, and instructions for setup of that design are here.
Some saved references to papers are here.
Investigating Radiation Induced Rowhammer and Retention Failures in DRAM